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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">omna</journal-id><journal-title-group><journal-title xml:lang="ru">Омский научный вестник</journal-title><trans-title-group xml:lang="en"><trans-title>Omsk Scientific Bulletin</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1813-8225</issn><issn pub-type="epub">2541-7541</issn><publisher><publisher-name>Омский государственный технический университет</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.25206/1813-8225-2023-186-134-139</article-id><article-id custom-type="elpub" pub-id-type="custom">omna-233</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА, ФОТОНИКА, ПРИБОРОСТРОЕНИЕ И СВЯЗЬ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRONICS, PHOTONICS, APPLIANCE AND COMMUNICATIONS</subject></subj-group></article-categories><title-group><article-title>Исследование электроиндукционного дискового датчика напряженности электрического поля</article-title><trans-title-group xml:lang="en"><trans-title>Study of electroinductive disk sensor of electric field strength</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1362-9911</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бирюков</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Biryukov</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>БИРЮКОВ Сергей Владимирович, доктор технических наук, профессор (Россия), профессор кафедры физики</p><p>г. Омск</p></bio><bio xml:lang="en"><p>BIRYUKOV Sergey Vladimirovich, Doctor of Technical Sciences, Professor, Professor of Physics Department</p><p>Omsk</p></bio><email xlink:type="simple">sbiryukov154@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">Омский государственный технический университет<country>Россия</country></aff><aff xml:lang="en">Omsk State Technical University<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>30</day><month>06</month><year>2023</year></pub-date><volume>0</volume><issue>2</issue><fpage>134</fpage><lpage>139</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Бирюков С.В., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Бирюков С.В.</copyright-holder><copyright-holder xml:lang="en">Biryukov S.V.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://onv.omgtu.ru/jour/article/view/233">https://onv.omgtu.ru/jour/article/view/233</self-uri><abstract><p>Задачи, связанные с защитой биологических и технических объектов от воздействия электрических, являются актуальными. Одна из таких задач связана с разработкой датчиков напряженности электрического поля с заданными метрологическими характеристиками. Целью исследования является минимизация погрешности известного датчика и расширения его пространственного диапазона измерений за счет рационального выбора чувствительных элементов. Предложенный в работе датчик имеет отрицательную погрешность δ от неоднородности поля по модулю, не превышающую 3 % в пространственном диапазоне измерения 0≤а≤R, где R — радиус дискового основания датчика. Для обеспечения требуемых метрологических характеристик датчика были подобраны рациональные размеры его чувствительных элементов. При этом рациональный радиус r чувствительных элементов, выполненных в форме круга, должен удовлетворять условию r&lt;R, т.е. должен быть меньше радиуса R дискового основания датчика. При выполнении этого условия меньшему радиусу r чувствительного элемента будет соответствовать меньшая погрешность δ от неоднородности поля и больший пространственный диапазон измерения. В сравнении с известными датчиками, при одинаковой погрешности, предложенный датчик имеет пространственный диапазон измерения примерно в пять раз больше. Такой подход к выбору чувствительных элементов позволяет проектировать датчики с лучшими метрологическими характеристиками. </p></abstract><trans-abstract xml:lang="en"><p>Tasks related to the protection of biological and technical objects from the effects of electrical are relevant. One of these tasks is related to the development of electric field strength sensors with specified metrological characteristics. The aim of the study is to minimize the error of the known sensor and expand its spatial measurement range due to the rational choice of sensitive elements. The sensor proposed in the work has a negative error δ from the field inhomogeneity modulo no more than 3 % in the spatial measurement range 0≤a≤R, where R is the radius of the disk base of the sensor. To ensure the required metrological characteristics of the sensor, rational dimensions of its sensitive elements are selected. In this case, the rational radius r of the sensing elements made in the shape of a circle must satisfy the condition r&lt;R, i.e. it must be less than the radius R of the disk base of the sensor. If this condition is met, a smaller radius r of the sensing element will correspond to a smaller error δ from the inhomogeneity of the field and a larger spatial measurement range. In comparison with known sensors, with the same error, the proposed sensor has a spatial measurement range approximately five times larger. This approach to the selection of sensitive elements allows us to design sensors with the best metrological characteristics. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>электрическое поле</kwd><kwd>однородное поле</kwd><kwd>неоднородное поле</kwd><kwd>точечный источник</kwd><kwd>напряженность</kwd><kwd>дисковый датчик</kwd><kwd>погрешность от неоднородности поля</kwd><kwd>электрометрические измерения</kwd></kwd-group><kwd-group xml:lang="en"><kwd>electric field</kwd><kwd>homogeneous field</kwd><kwd>inhomogeneous field</kwd><kwd>point source</kwd><kwd>intensity</kwd><kwd>disk sensor</kwd><kwd>error from field inhomogeneity</kwd><kwd>electrometric measurements</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Юркевич В. М., Кондратьев Б. Л. О методике измерения напряженности и других характеристик электрического поля // Измерительная техника. 1980. № 5. 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